Product Overview
We provide high-quality CVD graphene transferred onto silicon oxide (SiO₂) substrates, offering an ideal platform for electronic device fabrication and research. Our graphene is grown on copper catalysts using surface-mediated CVD processes, then precisely transferred onto thermally oxidized silicon wafers, providing excellent material properties and device compatibility.
Specifications
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Substrate: Silicon with 300 nm thermal oxide
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Graphene Area: 2cm × 2cm
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Layer Options: Single, Double, 3-5, 6-8 layers
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Substrate Thickness: 525 μm standard silicon wafer
Key Properties
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Excellent Electrical Properties: High carrier mobility (>2000 cm²/V·s)
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Outstanding Optical Transparency: >97% visible light transmittance
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Superior Mechanical Strength: High flexibility and durability
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Chemical Stability: Stable performance at room temperature
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Atomic Smoothness: Ideal for nanoscale device fabrication
Product Features
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Ready for immediate device fabrication
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Compatible with standard lithography processes
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Excellent contrast on SiO₂ for optical identification
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High crystalline quality with minimal defects
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Uniform coverage across entire substrate
Applications
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Field-effect transistors and electronic devices
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Transparent conductive electrodes and touch screens
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Chemical and biological sensors
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Solar cells and energy storage devices
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Research and development projects
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Educational demonstrations and experiments
Technical Advantages
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Direct integration into existing semiconductor processes
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Excellent substrate for electrical characterization
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Ideal for optical microscopy and Raman spectroscopy
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Suitable for both fundamental research and device prototyping
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Compatible with cleanroom processing techniques
Quality Assurance
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Raman spectroscopy characterization
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Optical microscopy inspection
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Electrical property verification
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Batch consistency testing
Contact Information
For technical specifications and ordering:
Email: sales@maxnanotech.com





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