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CVDGraphene on silicon oxide substrate1cmx1cm

Price range: $291.67 through $354.17

High-quality CVD graphene transferred onto standard 1×1 cm SiO₂/Si wafers. Offers exceptional electronic properties, high optical transparency, and superior mechanical flexibility. Ideal for electronic devices, optoelectronics, sensors, and energy applications.

Substrate: 300 nm SiO₂/Si
Chip Size: 1×1 cm
Layers: Mono/Bi/3-5/6-8 layers
Contact: sales@maxnanotech.c

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Overview
CVD graphene is synthesized through a carefully controlled chemical vapor deposition process involving three critical elements: substrate selection, carbon precursor, and growth conditions. Suitable substrates include transition metals such as Cu, Ni, Pt, and their alloys, with the growth mechanism varying based on the substrate—either through carbon segregation and precipitation or surface-catalyzed deposition. Copper substrates, in particular, facilitate the formation of high-quality monolayer graphene due to their self-limiting catalytic behavior.

This product consists of graphene grown via CVD on a metal substrate, then transferred onto a 1 cm × 1 cm SiO₂/Si wafer—a standard and widely used substrate in electronic and photonic device research and prototyping.

Specifications

  • Substrate: 300 nm SiO₂ on Si

  • Chip Size: 1 cm × 1 cm

  • Available Layers: Monolayer, Bilayer, 3–5 Layers, 6–8 Layers

Key Features

  • High Crystallinity and Uniformity: Offers exceptional electronic and structural quality

  • Excellent Electrical Properties: Displays high carrier mobility and low sheet resistance

  • Outstanding Optical Transparency: Maintains high visible-light transmittance

  • Superior Mechanical Properties: Combines flexibility with high tensile strength

  • Chemical Stability: Resists degradation under ambient conditions

Applications

  • Electronic Devices: Field-effect transistors (FETs), RF devices, and integrated circuits

  • Optoelectronics: Transparent conductive electrodes, touch panels, and flexible displays

  • Sensing Platforms: Chemical sensors, gas detectors, and biosensors

  • Energy Devices: Solar cells, supercapacitors, and battery electrodes

  • Composite Integration: Used as a functional layer to enhance mechanical, electrical, or barrier properties

Note
Graphene is grown on metal catalysts (e.g., copper foil) and transferred onto SiO₂/Si substrates using a PMMA-assisted wet transfer process, which ensures high purity and minimal defects.

Contact Information
For detailed specifications, layer options, or custom transfer substrate requests, please contact:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
Specification

Single-layer, area 1cm x 1cm, 1pcs/box, Double-layer, area 1cm x 1cm, 1pcs/box, 3-5 layers, area 1cm x 1cm, 1pcs/box, 6-8 layers, area 1cm x 1cm,1pcs/box

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