CVDGraphene film on silicon substrate1cmx1cm

Product Overview
We produce high-quality CVD graphene films on silicon substrates, providing an ideal platform for semiconductor research and electronic device development. Our manufacturing process utilizes copper-catalyzed surface growth to create uniform graphene layers, which we then transfer onto standard silicon substrates using optimized techniques. This combination offers exceptional compatibility with existing semiconductor processes and characterization methods.

Specifications

• Substrate: Standard silicon wafer

• Graphene Area: 1cm × 1cm

• Layer Options: Single, Double, 3-5, 6-8 layers

• Quality Assurance: Raman characterization referenced to silicon oxide substrates

Key Features

• Semiconductor Compatibility: Ideal for integration with silicon-based devices

• Excellent Electrical Properties: High carrier mobility with low sheet resistance

• Surface Uniformity: Consistent coverage across entire area

• Mechanical Durability: Withstands standard processing conditions

• Thermal Stability: Maintains performance under processing temperatures

Applications

• Semiconductor device research and development

• Field-effect transistors and nanoelectronics

• Sensor and detector fabrication

• MEMS and NEMS applications

• Fundamental materials research

Technical Advantages

• Ready for immediate device fabrication

• Compatible with standard cleanroom processes

• Ideal for electrical characterization studies

• Suitable for both research and prototyping

• Custom patterning available

Quality Certification

• Batch-to-b consistency verification

• Electrical performance testing available

• Surface quality inspection reports

• Custom characterization services offered

Contact Information
For technical specifications and research pricing:
Email: sales@maxnanotech.com