CVDGraphene film on silicon substrate2.5cmx2.5cm

Product Overview
We produce high-quality CVD graphene directly on silicon substrates, providing researchers with an ideal platform for semiconductor device integration and materials research. Our graphene is synthesized using copper-catalyzed CVD methods and transferred onto silicon wafers, offering excellent electrical properties and compatibility with standard semiconductor processes.

Specifications

• Substrate: Standard silicon wafer

• Graphene Area: 2.5cm × 2.5cm

• Layer Options: Single, Double, 3-5, 6-8 layers

• Characterization: Raman tested on silicon oxide substrate

• Wafer Thickness: 525 μm

Key Properties

• Excellent Crystallinity: High-quality graphene with minimal defects

• Superior Electrical Properties: High carrier mobility with low resistivity

• Good Optical Transparency: High visible light transmittance

• Mechanical Flexibility: Good durability and bending tolerance

• Chemical Stability: Stable performance at room temperature

Product Features

• Direct silicon substrate compatibility

• Ready for device fabrication

• Excellent material quality

• Uniform coverage across entire area

• Suitable for various characterization techniques

Applications

• Field-effect transistors and electronic components

• Transparent conductive films and touch screens

• Chemical and biological sensors

• Solar cells and energy storage devices

• Composite material enhancement

• Research and development projects

Technical Advantages

• Compatible with semiconductor processing

• Ideal for electrical characterization studies

• Suitable for optical and electronic applications

• Ready for immediate research use

• Custom layer configurations available

Quality Assurance

• Raman spectroscopy verification

• Electrical property testing

• Optical quality inspection

• Surface uniformity assessment

Contact Information
For technical specifications and ordering:
Email: Sales@maxnanotech.com