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Purely importedHQ grapheneHafnium Selenide Crystal

$2,250.00

99.995% purity, ~8 mm metallic gray-black crystals. Indirect ~1.1 eV band gap, high nonlinear coefficient. Ideal for THz generation, IR photonics, frequency conversion, and 2D research.

  • Structure: Hexagonal (a=b=0.3745 nm, c=0.6160 nm)

  • Key features: Terahertz performance, IR transparency, van der Waals exfoliation

  • Applications: Nonlinear optics, photodetectors, communications, sensing

Email: Sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Product Overview
We supply high-purity hafnium diselenide (HfSe₂) crystals from HQ Graphene, featuring exceptional semiconductor properties with an indirect band gap of ~1.1 eV. These van der Waals crystals exhibit a metallic gray-black appearance and hexagonal structure, making them ideal for advanced applications in nonlinear optics, terahertz technology, and infrared photonics.

Specifications

  • Type: Synthetic single crystal

  • Purity: >99.995%

  • Size: ~8 mm

  • Color: Metallic gray-black

  • Crystal Structure: Hexagonal

  • Unit Cell: a = b = 0.3745 nm, c = 0.6160 nm

  • Angles: α = β = 90°, γ = 120°

Key Properties

  • Semiconductor Characteristics: Indirect band gap ~1.1 eV

  • High Nonlinear Coefficient: Excellent for frequency conversion

  • Van der Waals Structure: Easy exfoliation to 2D layers

  • Terahertz Performance: Effective THz wave generation and detection

  • Infrared Transparency: Suitable for mid- to far-IR applications

Product Features

  • High crystalline quality

  • Uniform hexagonal morphology

  • Excellent exfoliation properties

  • Stable chemical composition

  • Consistent batch performance

Applications
Nonlinear Optics

  • Terahertz wave generation and detection

  • Optical frequency converters

  • Mid-infrared laser systems

  • Far-infrared light sources

Photonic Devices

  • High-sensitivity mid-infrared photodetectors

  • Terahertz time-domain spectroscopy systems

  • Optical rectification applications

  • Infrared imaging systems

Communications Technology

  • Advanced communication systems

  • Terahertz imaging applications

  • Sensor technology components

  • Signal processing devices

Research Applications

  • 2D material studies

  • van der Waals heterostructures

  • Terahertz technology development

  • Infrared photonics research

Technical Advantages

  • Superior nonlinear optical performance

  • High damage threshold for intense applications

  • Low absorption coefficient in operational bands

  • Excellent terahertz generation efficiency

  • Customizable crystal sizes available

Quality Assurance

  • Crystalline structure verification

  • Optical property characterization

  • Electrical performance testing

  • Chemical composition analysis

  • Batch consistency certification

Contact Information
For technical specifications and ordering:
Email: Sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
Specification

Purity: 99.995%; Dimensions: ~8 mm

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