Product Overview
We supply specialized copper foil optimized for chemical vapor deposition (CVD) graphene growth. Our foil undergoes precise annealing and surface treatment to provide an ideal substrate for producing high-quality, large-area graphene films with excellent crystalline structure and electrical properties.
Specifications
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Dimensions: 20 × 30 cm
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Thickness: ~25 μm
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Purity: >99.9 wt%
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Surface Roughness: <5 nm RMS
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Grain Size: >100 μm after annealing
Key Properties
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High Purity: Minimizes impurity interference during graphene growth
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Excellent Surface Flatness: Provides uniform substrate for consistent graphene formation
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Optimized Grain Structure: Reduced grain boundaries for lower nucleation density
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Thermal Stability: Maintains structural integrity at high temperatures
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Surface Quality: Ultra-smooth surface for continuous graphene films
Pre-Treatment Process
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Annealing at 1000°C for 30 minutes
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Grain growth and boundary reduction
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Surface oxidation removal
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Contamination-free handling
Product Features
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Specifically designed for CVD graphene synthesis
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Consistent surface quality across entire foil
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Reduced graphene nucleation defects
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Enhanced graphene carrier mobility
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Reproducible growth results
Primary Application
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CVD Graphene Growth: Ideal substrate for high-quality monolayer graphene production
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Research & Development: Reproducible platform for graphene studies
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Industrial Production: Scalable substrate for commercial graphene manufacturing
Technical Advantages
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Lower graphene nucleation density
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Improved graphene crystal quality
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Enhanced electrical properties
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Larger single-crystal graphene domains
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Better batch-to-batch consistency
Quality Assurance
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Purity verification through composition analysis
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Surface roughness measurement
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Grain size characterization
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Contamination testing
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Performance validation in graphene growth
Contact Information
For technical specifications and ordering:
Email: Sales@maxnanotech.com





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