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CVDGraphene on silicon oxide substrate2cmx2cm

Price range: $364.58 through $437.50

Single to 8-layer graphene on 300nm SiO₂/Si wafer. High mobility (>2000 cm²/V·s), >97% transparency, excellent flexibility. Ready for device fabrication, sensors, electronics, and research.

  • Substrate: 525μm Si with 300nm thermal oxide

  • Key features: Uniform coverage, cleanroom compatible, high contrast

  • Applications: FETs, transparent electrodes, energy devices, R&D

Email: sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Product Overview
We provide high-quality CVD graphene transferred onto silicon oxide (SiO₂) substrates, offering an ideal platform for electronic device fabrication and research. Our graphene is grown on copper catalysts using surface-mediated CVD processes, then precisely transferred onto thermally oxidized silicon wafers, providing excellent material properties and device compatibility.

Specifications

  • Substrate: Silicon with 300 nm thermal oxide

  • Graphene Area: 2cm × 2cm

  • Layer Options: Single, Double, 3-5, 6-8 layers

  • Substrate Thickness: 525 μm standard silicon wafer

Key Properties

  • Excellent Electrical Properties: High carrier mobility (>2000 cm²/V·s)

  • Outstanding Optical Transparency: >97% visible light transmittance

  • Superior Mechanical Strength: High flexibility and durability

  • Chemical Stability: Stable performance at room temperature

  • Atomic Smoothness: Ideal for nanoscale device fabrication

Product Features

  • Ready for immediate device fabrication

  • Compatible with standard lithography processes

  • Excellent contrast on SiO₂ for optical identification

  • High crystalline quality with minimal defects

  • Uniform coverage across entire substrate

Applications

  • Field-effect transistors and electronic devices

  • Transparent conductive electrodes and touch screens

  • Chemical and biological sensors

  • Solar cells and energy storage devices

  • Research and development projects

  • Educational demonstrations and experiments

Technical Advantages

  • Direct integration into existing semiconductor processes

  • Excellent substrate for electrical characterization

  • Ideal for optical microscopy and Raman spectroscopy

  • Suitable for both fundamental research and device prototyping

  • Compatible with cleanroom processing techniques

Quality Assurance

  • Raman spectroscopy characterization

  • Optical microscopy inspection

  • Electrical property verification

  • Batch consistency testing

Contact Information
For technical specifications and ordering:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
Specification

Layer Number: 1 layer; Area: 2 cm × 2 cm, Layer Number: 2 layers; Area: 2 cm × 2 cm, Layer Number: 3-5 layers; Area: 2 cm × 2 cm, Layer Number: 6-8 layers; Area: 2 cm × 2 cm

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