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Purely importedHQ grapheneRhenium Selenide Crystal

$2,250.00

High-purity rhenium diselenide (ReSe₂) crystals, >99.995% purity, ~8 mm triangular shape. Semiconductor with bandgap of ~1.1 eV and anisotropic triclinic structure. Ideal for photodetectors, field-effect transistors, flexible electronics, and gas sensors.

Structure: Triclinic
Packaging: Standard customized packaging
Typical Applications: Infrared sensors, RRAM, photovoltaic devices, environmental monitoring sensors
Email: sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Product Overview
We supply high-purity rhenium diselenide (ReSe₂) crystals, a semiconductor with a bandgap of ~1.1 eV and unique triclinic crystal structure. These triangular-shaped van der Waals crystals exhibit anisotropic electronic properties and are suitable for advanced electronic and optoelectronic applications.

Specifications

  • Type: Synthetic crystal

  • Purity: >99.995%

  • Size: ~8 mm

  • Color: Black

  • Crystal Structure: Triclinic

  • Unit Cell: a = 0.658 nm, b = 0.670 nm, c = 0.672 nm

  • Angles: α = 91.75°, β = 105°, γ = 118.9°

  • Carrier Density: n-type ~10¹⁶ cm⁻³

Key Properties

  • Semiconductor Properties: Bandgap ~1.1 eV

  • Anisotropic Structure: Triclinic crystal symmetry

  • Van der Waals Layers: Easy exfoliation into 2D layers

  • N-type Semiconductor: Controlled carrier density

  • Thermal Stability: Suitable for device integration

Applications

  • Electronics: Field-effect transistors (FETs), flexible electronics

  • Memory Devices: Resistive random-access memory (RRAM)

  • Optoelectronics: Photodetectors, infrared sensors

  • Energy: Thin-film solar cells, photovoltaic devices

  • Sensors: Gas sensors for environmental monitoring

  • Nanotechnology: Nano-scale electronic circuits

Quality Assurance

  • Crystal structure verification (XRD)

  • Electrical property characterization

  • Bandgap measurement

  • Carrier density analysis

  • Batch consistency testing

Contact Information
For technical specifications and ordering:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
Specification

Purity: 99.995%; Size: ~8 mm

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