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Purely importedHQ grapheneRhenium sulfide crystals

$2,250.00

High-purity rhenium disulfide (ReS₂) crystals, >99.995% purity, ~8 mm flower-like clusters. Direct bandgap semiconductor (~1.35 eV) with unique anisotropic triclinic structure. Ideal for photodetectors, field-effect transistors, resistive memory, and gas sensors.

Structure: Triclinic
Packaging: Standard customized packaging
Typical Applications: Infrared sensors, flexible electronics, RRAM, NH₃/CO detection sensors
Email: sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Product Overview
We supply high-purity rhenium disulfide (ReS₂) crystals, a direct-bandgap semiconductor (~1.35 eV) with unique triclinic crystal structure. These flower-like van der Waals crystals exhibit anisotropic electronic properties and are ideal for advanced optoelectronic and nanoelectronic applications.

Specifications

  • Type: Synthetic crystal

  • Purity: >99.995%

  • Size: ~8 mm (flower-like cluster)

  • Color: Silver-black

  • Crystal Structure: Triclinic

  • Unit Cell: a = 0.634 nm, b = 0.640 nm, c = 0.645 nm

  • Angles: α = 106.74°, β = 119.03°, γ = 89.97°

  • Carrier Density: n-type ~10¹⁷ cm⁻³

Key Properties

  • Direct Bandgap: ~1.35 eV

  • Anisotropic Structure: Triclinic crystal symmetry

  • Van der Waals Layers: Easy exfoliation into 2D layers

  • High Carrier Mobility: Suitable for high-speed devices

  • N-type Semiconductor: Controlled charge carrier density

Applications

  • Electronics: Field-effect transistors (FETs), flexible electronics

  • Memory Devices: Resistive random-access memory (RRAM)

  • Optoelectronics: Photodetectors, infrared sensors

  • Energy: Thin-film solar cells, photovoltaics

  • Sensors: Gas sensors (CO, NH₃ detection)

  • Nanotechnology: Nano-scale electronic devices

Quality Assurance

  • Crystal structure verification (XRD)

  • Bandgap characterization

  • Electrical property testing

  • Carrier density measurement

  • Batch consistency certification

Contact Information
For technical specifications and ordering:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
Specification

Purity: 99.995%; Size: ~8 mm

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