Product Overview
We provide large-format CVD graphene on 4-inch silicon wafers with thermal oxide layers, designed for advanced research and industrial applications requiring substantial graphene areas. Our material combines exceptional electrical properties with standard semiconductor compatibility, making it ideal for both device prototyping and production-scale applications.
Specifications
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Substrate: 4-inch silicon wafer (300 nm thermal oxide)
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Graphene Coverage: 7cm × 7cm
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Layer Options: Single, Double, 3-5, 6-8 layers
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Wafer Specifications: 525 μm thickness, p-type doping
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Sheet Resistance: 200-1000 Ω/sq (single layer)
Key Properties
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High Carrier Mobility: >2000 cm²/V·s at room temperature
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Excellent Optical Transparency: >97.5% visible light transmission
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Outstanding Mechanical Strength: 130 GPa intrinsic strength
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Superior Thermal Conductivity: ~3000 W/m·K in-plane
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Chemical Stability: inert to most environmental factors
Product Features
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Large-area uniform coverage
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Standard semiconductor wafer format
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Excellent optical contrast for layer identification
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Compatible with cleanroom processing
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Ready for immediate device fabrication
Applications
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Large-area electronic devices and circuits
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Transparent electrode arrays for displays
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High-density sensor arrays
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Solar cell and energy harvesting systems
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Advanced research and development projects
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Educational and demonstration platforms
Technical Advantages
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Maximum graphene area on standard wafer
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Excellent uniformity across entire surface
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Direct compatibility with semiconductor tools
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Suitable for photolithography patterning
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Ideal for automated processing systems
Quality Assurance
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Full-area Raman mapping certification
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Electrical property uniformity testing
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Optical quality verification
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Surface contamination control
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Batch-to-batch consistency guarantee
Contact Information
For technical specifications and volume pricing:
Email: sales@maxnanotech.com





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