Email

beikeheq@gmail.com

CVDGraphene on silicon oxide substrate7cmx7cm

Price range: $843.75 through $1,012.50

Single to 8-layer graphene with >2000 cm²/V·s mobility, >97.5% transparency, and high flexibility. Standard 4″ wafer format for large-area devices, sensors, displays, and research.

  • Substrate: 4″ p-type Si with 300nm SiO₂

  • Sheet resistance: 200–1000 Ω/sq (single layer)

  • Applications: Electronics, energy harvesting, sensor arrays, prototyping

Email: sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

Inquiry Now

Product Overview
We provide large-format CVD graphene on 4-inch silicon wafers with thermal oxide layers, designed for advanced research and industrial applications requiring substantial graphene areas. Our material combines exceptional electrical properties with standard semiconductor compatibility, making it ideal for both device prototyping and production-scale applications.

Specifications

  • Substrate: 4-inch silicon wafer (300 nm thermal oxide)

  • Graphene Coverage: 7cm × 7cm

  • Layer Options: Single, Double, 3-5, 6-8 layers

  • Wafer Specifications: 525 μm thickness, p-type doping

  • Sheet Resistance: 200-1000 Ω/sq (single layer)

Key Properties

  • High Carrier Mobility: >2000 cm²/V·s at room temperature

  • Excellent Optical Transparency: >97.5% visible light transmission

  • Outstanding Mechanical Strength: 130 GPa intrinsic strength

  • Superior Thermal Conductivity: ~3000 W/m·K in-plane

  • Chemical Stability: inert to most environmental factors

Product Features

  • Large-area uniform coverage

  • Standard semiconductor wafer format

  • Excellent optical contrast for layer identification

  • Compatible with cleanroom processing

  • Ready for immediate device fabrication

Applications

  • Large-area electronic devices and circuits

  • Transparent electrode arrays for displays

  • High-density sensor arrays

  • Solar cell and energy harvesting systems

  • Advanced research and development projects

  • Educational and demonstration platforms

Technical Advantages

  • Maximum graphene area on standard wafer

  • Excellent uniformity across entire surface

  • Direct compatibility with semiconductor tools

  • Suitable for photolithography patterning

  • Ideal for automated processing systems

Quality Assurance

  • Full-area Raman mapping certification

  • Electrical property uniformity testing

  • Optical quality verification

  • Surface contamination control

  • Batch-to-batch consistency guarantee

Contact Information
For technical specifications and volume pricing:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
specification

Layers: Single layer; Area: 7 cm × 7 cm, Layers: Double layer; Area: 7 cm × 7 cm, Layers: 3-5 layers; Area: 7 cm × 7 cm, Layers: 6-8 layers; Area: 7 cm × 7 cm

Reviews

There are no reviews yet.

Be the first to review “CVDGraphene on silicon oxide substrate7cmx7cm”

Your email address will not be published. Required fields are marked *

Scroll to Top