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CVDGraphene on silicon oxide substrate5cmx5cm

Price range: $583.33 through $700.00

Single to 8-layer graphene on 300nm SiO₂/p-type Si. High mobility (>2000 cm²/V·s), >97% transparency, excellent flexibility. Standard wafer format for semiconductor processing, ideal for devices, sensors, and research.

  • Substrate: 4″ Si wafer (525μm, 0.01–0.02 Ω·cm)

  • Key features: High uniformity, cleanroom compatible, ready for fabrication

  • Applications: FETs, transparent electrodes, energy devices, flexible electronics

Email: sales@maxnanotech.com

Important Notes

  •  No Refunds or Exchanges: All sales are final. MAXNANO does not provide return, exchange, or refund services under any circumstances.
  • Customs and Import Obligations: Clearance procedures, import duties, taxes, and related costs are solely the responsibility of the recipient/importer. MAXNANO shall not be held liable for delays, rejections, or any additional expenses incurred during customs processes. Such issues shall not constitute grounds for order cancellation or refund.
  • Order Cancellation: Orders cannot be revoked once submitted. No refunds will be issued for cancelled or undelivered orders.
  • Indemnification: The purchaser agrees to bear all claims, losses, legal liabilities, and expenses arising from the use of products and services, and shall hold MAXNANO, its affiliates, and personnel harmless from such obligations.
  • Terms and Conditions: All orders and business interactions are subject to MAXNANO’s standard Terms and Agreements.

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Product Overview
We produce large-area CVD graphene on 4-inch silicon wafers with thermal oxide layers, providing an ideal platform for semiconductor device fabrication and research applications. Our graphene is synthesized using copper-catalyzed CVD processes and transferred onto standardized SiO₂/Si substrates, ensuring excellent material quality and compatibility with existing semiconductor manufacturing processes.

Specifications

  • Substrate: 4-inch silicon wafer with 300 nm thermal oxide

  • Graphene Area: 5cm × 5cm

  • Layer Options: Single, Double, 3-5, 6-8 layers

  • Wafer Thickness: 525 μm

  • Resistivity: 0.01-0.02 Ω·cm (p-type silicon)

Key Properties

  • Excellent Electrical Performance: High carrier mobility (>2000 cm²/V·s)

  • Outstanding Optical Transparency: >97% visible light transmittance

  • Superior Mechanical Properties: High flexibility with 1.0 TPa Young’s modulus

  • Thermal Stability: Stable up to 600°C in air

  • Chemical Inertness: Resistant to most solvents and acids

Product Features

  • Standard 4-inch wafer format for easy processing

  • Excellent optical contrast for layer identification

  • Compatible with photolithography and etching processes

  • High uniformity across entire substrate

  • Ready for immediate device fabrication

Applications

  • High-performance field-effect transistors

  • Transparent conductive electrodes and displays

  • Advanced chemical and biological sensors

  • Solar cells and energy storage devices

  • Flexible electronics and wearable devices

  • Research and educational applications

Technical Advantages

  • Direct integration with semiconductor fabrication lines

  • Excellent substrate for electrical characterization

  • Ideal for optical and Raman spectroscopy studies

  • Suitable for large-scale device arrays

  • Compatible with automated processing equipment

Quality Assurance

  • Comprehensive Raman spectroscopy mapping

  • Optical microscopy inspection for defects

  • Electrical transport property verification

  • Thickness uniformity testing

  • Surface cleanliness certification

Contact Information
For technical specifications and volume pricing:
Email: sales@maxnanotech.com

Weight 100 g
Dimensions 30 × 20 × 20 mm
specification

Layers: Single-layer; Area: 5 cm × 5 cm, Layers: Double-layer; Area: 5 cm × 5 cm, Layers: 3–5 layers; Area: 5 cm × 5 cm, Layers: 6–8 layers; Area: 5 cm × 5 cm

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